The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors

Hwu, J.-G.J.-G.HwuChang, J.-J.J.-J.ChangWang, W.-S.W.-S.WangJENN-GWO HWU2018-09-102018-09-101986http://www.scopus.com/inward/record.url?eid=2-s2.0-0022663517&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/321883[SDGs]SDG14The effect of postoxidation cooling in oxygen on the interface property of MOS capacitorsjournal article10.1080/00207218608920785