van Thanh, VuongVuongvan ThanhDung, Nguyen ThuyNguyen ThuyDungBach, Le XuanLe XuanBachvan Truong, DoDovan TruongTUAN HUNG NGUYEN2025-09-242025-09-242022https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115244245&doi=10.1007%2F978-981-16-3239-6_77&partnerID=40&md5=75270a73e449c8b7feae1d3de43888aehttps://scholars.lib.ntu.edu.tw/handle/123456789/732354International Conference on Modern Mechanics and Applications, ICOMMA 2020. Ho Chi Minh City. Conference code: 264889We investigate mechanical, electronic, and optical properties of monolayer Janus SnSTe and SnSeTe with 1T structure under biaxial strain based on first-principles calculations. We find that both SnSTe and SnSeTe are metallics for the unstrain case. SnSTe and SnSeTe become semiconductors at the biaxial strains of 6% and 4%, respectively. The biaxial strain effectively modulates the optical absorption of the monolayer Sn-dichalcogenides. Besides, the theoretical strengths of SnSTe and SnSeTe are also investigated. Our obtained results are helpful for applications in nano-electromechanical, optoelectronic, and photocatalytic devices based on the monolayer SnSTe and SnSeTe.First-principlesOptical AbsorptionTheoretical StrengthTransition Metal DichalcogenidesCalculationsIv-vi SemiconductorsLayered SemiconductorsLight AbsorptionMonolayersOptical PropertiesSemiconducting Selenium CompoundsSemiconducting Tin CompoundsStrainBiaxial StrainsDichalcogenidesElectronic And Optical PropertiesFirst Principle CalculationsFirst PrinciplesMetallicsNano-electromechanicalStrain BasedTheoretical StrengthTransition Metal DichalcogenidesTransition MetalsTurning Electronic and Optical Properties of Monolayer Janus Sn-Dichalcogenides By Biaxial Strainconference paper10.1007/978-981-16-3239-6_772-s2.0-85115244245