D. K. ShihL. W. SungT. Y. ChuT. R. YangHAO-HSIUNG LIN2018-09-102018-09-102003-02https://www.scopus.com/inward/record.uri?eid=2-s2.0-0038005552&doi=10.1143%2fjjap.42.375&partnerID=40&md5=c2676e8485184e522af4384175052250We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates using plasma-assisted gas-source molecular beam epitaxy. From absorption measurements, it is found that the fundamental absorption energy of InAsN is higher than that of InAs due to the Burstein-Moss effect resulting from the high residual carrier concentration in InAsN. To deduce the 'real' band-gap energy of InAsN samples, the energy shift due to the Burstein-Moss effect and the band-gap narrowing effect are calculated by using a self-consistent approach based on the band-anticrossing (BAC) model [Shan et al.: Phys. Rev. Lett. 82 (1999) 1221]. After correction, the 'real' band-gap energy of InAsN samples decreases as N increases. The electron effective mass of InAsN is also investigated by plasma-edge measurement. We found a sizeable increase of the electron effective mass in these InAsN alloys, which is consistent with the theoretical predictions based on the BAC model.application/pdfapplication/pdfBurstein-Moss effect; Effective mass; Gas source MBE; InAsN; Infrared reflectivity; Localized state; Nitride[SDGs]SDG7Band structure; Carrier concentration; Electric properties; Molecular beam epitaxy; Nitrogen; Optical properties; Absorption energy; Band gap energy; Band-anticrossing model; Band-gap narrowing effect; Burtein-Moss effect; Electron effective mass; Infrared reflectivity; Localized state; Plasma assisted gas-source molecular beam epitaxy; Plasma-edge measurement; Semiconducting indium compoundsjournal article10.1143/jjap.42.3752-s2.0-0038005552WOS:000181805200005