Duan, Siang YungSiang YungDuanCHING-JAN CHENChen, Yen MingYen MingChenLai, Wen ShangWen ShangLaiChaturvedi, PradyumnPradyumnChaturvedi2023-11-082023-11-082023-01-019798350337112https://scholars.lib.ntu.edu.tw/handle/123456789/637000This paper proposed a switching behavior equivalent circuit model for the gate driver board of SiC MOSFETs that includes the gate driver IC and parasitic components of the printed circuit board (PCB). Because SiC applications involve high switching frequency, high voltages, and high currents, the gate driver would greatly affect the switching performance and loss. Therefore, this paper presents a novel equivalent circuit model for SiC gate driver that incorporates nonlinear resistors and capacitors of driver output stage and parasitic inductance of PCB to achieve a more accurate prediction of switching behavior. The equivalent circuit model is then built into LTSPICE simulation model and compared with measured VGS waveform of gate driver board connected to a capacitor to model the input capacitance of SiC. Compared with the old modeling methods, the new modeling methods reduces the error between the simulation and measurement for Vout rising (falling) time from 15% to less than 1%. The accurate equivalent circuit can provide accurate digital twin and help designers reduce testing time and cost.Double Pulse Test | Gate Driver | SiC MOSFETconference paper10.1109/WiPDAAsia58218.2023.102619352-s2.0-85174226474https://api.elsevier.com/content/abstract/scopus_id/85174226474