Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effect

J. B. KuoE. C. SunM. T. LinJAMES-B KUO2018-09-102018-09-102003-11http://scholars.lib.ntu.edu.tw/handle/123456789/304106Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effectconference paper10.1109/edmo.2003.1259988