Deng, K.-L.K.-L.DengTsai, M.-D.M.-D.TsaiLin, C.-S.C.-S.LinWang, S.H.S.H.WangLien, W.Y.W.Y.LienKUN-YOU LINHUEI WANG2020-06-042020-06-042005https://www.scopus.com/inward/record.uri?eid=2-s2.0-33847333301&doi=10.1109%2fRFIT.2005.1598906&partnerID=40&md5=5d28a1a4a9432aaed8daa659fdb6cefbA Ku-band monolithic low-noise amplifier is presented in this paper. This LNA fabricated in commercial 0.18-μm CMOS technology is a two-stage common-source design instead of cascode configuration for lower noise performance. This CMOS LNA demonstrates a gain of better than 10 dB and a NF of better than 3.2 dB from 14 to 15 GHz. The measured output P1dB is about 5.2 dBm and input IP3 is 1.6 dBm. The chip size including all testing pads is 0.88 × 0.77 mm2.CMOS; Ku band; Lownoise amplifiers; Microwave; RFICconference paper10.1109/RFIT.2005.15989062-s2.0-33847333301