Liu, Yi-ChengYi-ChengLiuWang, Pei-HsuanPei-HsuanWangHuang, Yu-YuanYu-YuanHuangLin, Tsung-HsienTsung-HsienLin2026-04-242026-04-242026-02-192771957Xhttps://www.scopus.com/record/display.uri?eid=2-s2.0-105030687585&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/737505This letter presents a millimeter-Wave (mm-Wave) injection-locked oscillator (ILO) that integrates a pregenerator with a triple-pushed, three-stage ring oscillator (RO). The circuit is fabricated in 40-nm CMOS process without employing the ultrathick metal (UTM). Owing to the triple-pushed technique, the proposed ILO achieves mm-Wave operation without being constrained by process limitations. A systematic design methodology is also introduced. The fabricated ILO operates from 228 to 238.5 GHz, with power consumption of 47.7 mW. Under injection locking, the phase noise (PN) reaches −112.5 dBc/Hz at 1-MHz offset and −121.7 dBc/Hz at 10-MHz offset, resulting in a figure-of-merit (FoM) of −203.1 dBc/Hz. These results demonstrate that the proposed ILO achieves good performance even without the use of UTM in the fabrication process.falseFrequency multiplier (FM)injection-locked (IL)injection-locked oscillator (ILO)millimeter-Wave (mm-Wave)six-generation (6G) communicationsubterahertz (sub-THz)journal article10.1109/lmwt.2026.36590872-s2.0-105030687585