Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition

Liu, C.W.C.W.LiuVenkataraman, V.V.VenkataramanCHEE-WEE LIU2020-06-162020-06-161997https://scholars.lib.ntu.edu.tw/handle/123456789/502095Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor depositionjournal article10.1016/S0254-0584(97)80123-X2-s2.0-0031153228https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031153228&doi=10.1016%2fS0254-0584%2897%2980123-X&partnerID=40&md5=c9226063c9aa4577e2a9df487e066dfd