Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices

Dept. of Electr. Eng., National Taiwan Univ.Su, K.W.K.W.SuKuo, J.B.J.B.Kuo2007-04-192018-07-062007-04-192018-07-061995-10http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032080application/pdf209451 bytesapplication/pdfen-USAccumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devicesjournal article10.1109/SOI.1995.526449http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032080/1/00526449.pdf