Dept. of Electr. Eng., National Taiwan Univ.Su, K.W.K.W.SuKuo, J.B.J.B.Kuo2007-04-192018-07-062007-04-192018-07-061995-10http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032080The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI inversion-type and accumulation-type PMOS devices. Based on the study, contrary to inversion-type devices, the threshold voltage of mesa-isolated ultra-thin SOI accumulation-type PMOS devices shrinks as the channel width scales down as a result of the buried-channel effect influenced by the sidewall via the buried oxide.application/pdf209451 bytesapplication/pdfen-USjournal article10.1109/SOI.1995.526449http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032080/1/00526449.pdf