CHI-TE LIANGSmith, C.G.C.G.SmithSimmons, M.Y.M.Y.SimmonsRitchie, D.A.D.A.RitchieCheng, Y.-M.Y.-M.ChengHuang, T.-Y.T.-Y.HuangPao, C.H.C.H.PaoLee, C.-C.C.-C.LeePepper, M.M.PepperKim, G.-H.G.-H.KimLeem, J.Y.J.Y.Leem2018-09-102018-09-10200113869477http://www.scopus.com/inward/record.url?eid=2-s2.0-0035894131&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/292922We report low-temperature magnetoresistivity measurements of high-quality gated two-dimensional (2D) electron systems. In the dilute electron density limit, we show evidence for spin polarisation in an in-plane magnetic field. Using a simple model, we estimate the Landé g-factor in this dilute two-dimensional electron gas to be about 3.32. The enhanced Landé g-factor compared with that of a bulk GaAs 2D electron system (0.44) is ascribed to electron-electron interaction effects at ultra-low electron densities. © 2002 Elsevier Science B.V. All rights reserved.g-factor; Parallel magnetic field; SpinCarrier concentration; Electron transport properties; Magnetic field effects; Magnetoresistance; Semiconducting gallium arsenide; Parallel magnetic fields; Electron gasjournal article10.1103/PhysRevB.64.2333192-s2.0-0035894131WOS:000172867900036