AlN epitaxy on SiC by low-temperature atomic layer deposition: Via layer-by-layer, in situ atomic layer annealing

Kao W.-C.Lee W.-H.Yi S.-H.Shen T.-H.HSIN-CHIH LINMIIN-JANG CHEN2019-11-272019-11-27201920462069https://www.scopus.com/inward/record.uri?eid=2-s2.0-85064971714&doi=10.1039%2fc9ra00008a&partnerID=40&md5=da333ddda612d782d373a155172e46a1https://scholars.lib.ntu.edu.tw/handle/123456789/432405AlN epitaxy on SiC by low-temperature atomic layer deposition: Via layer-by-layer, in situ atomic layer annealingjournal article10.1039/c9ra00008a2-s2.0-85064971714