Cryogenic operation of third-generation, 200-GHz peak-fT, silicon-germanium heterojunction bipolar transistors

YI-JAN EMERY CHEN2018-09-102018-09-102005http://www.scopus.com/inward/record.url?eid=2-s2.0-20244369133&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/314310[SDGs]SDG7Cryogenic operation of third-generation, 200-GHz peak-fT, silicon-germanium heterojunction bipolar transistorsjournal article10.1109/TED.2005.845078