M. H.LiaoC.-H. YehC.-C. LeeC.-P. Wang2019-03-112019-03-11201621583226https://scholars.lib.ntu.edu.tw/handle/123456789/404568https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963545390&doi=10.1063%2f1.4945346&partnerID=40&md5=8511508603238da27b2c72348830e488The vertical gate-all-around (V-GAA) Si nano-tube (NT) devices with different diameter dimensions are studied in this work with the promising device performance. The V-GAA structure makes the transistor easy to be scaled down continuously to meet the complementary metal-oxide-semiconductor (CMOS) scaling requirements of the 7/10 nm technology node and beyond. The Si NT device with the hollow structure is demonstrated to have the capability to "deplete" and "screen-out" the out-of gate control carriers in the center of the NT and further result in the better device short channel control. Based on the study in this work, the V-GAA Si NT device with the optimized diameter dimension (=20 nm) can benefit the Ion-state current and reduce the Ioff-state stand-by power simultaneously, due to the less surface roughness scattering and the better short channel control characteristics. The proposed V-GAA Si NT device is regarded as one of the most promising candidates for the future application of the sub-7/10 nm logic era. © 2016 Author(s).Field effect transistors; Gallium alloys; Metals; MOS devices; Nanotubes; Oxide semiconductors; Reconfigurable hardware; Surface roughness; Transistors; Complementary metal oxide semiconductors; Device performance; Dimension effects; Future applications; Hollow structure; Short-channel controls; Surface roughness scattering; Technology nodes; Siliconjournal article2-s2.0-84963545390