Analysis of fringing-electric-field-related capacitance behavior of narrow-channel FD SOI NMOS devices using 3D simulation

Chen, C.C.C.C.ChenLin, O.G.O.G.LinKuo, J.B.J.B.KuoCHUNG-PING CHEN2020-06-112020-06-112007https://scholars.lib.ntu.edu.tw/handle/123456789/501026Analysis of fringing-electric-field-related capacitance behavior of narrow-channel FD SOI NMOS devices using 3D simulationconference paper10.1109/ICSICT.2006.3061882-s2.0-34547365925https://www.scopus.com/inward/record.uri?eid=2-s2.0-34547365925&doi=10.1109%2fICSICT.2006.306188&partnerID=40&md5=017a189ea622b418a80979d1b12728de