Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,

H. P. HsuY. N. HuangY. S. HuangY. T. LinT. C. MaH. H. LinK. K. TiongP. SitarekJ. MisiewiczHAO-HSIUNG LIN2018-09-102018-09-102009-05http://scholars.lib.ntu.edu.tw/handle/123456789/351809Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,journal article10.1002/pssa.2008814092-s2.0-65649108568WOS:000266472100013