Pai H.-CYUH-RENN WU2023-06-092023-06-092022https://www.scopus.com/inward/record.uri?eid=2-s2.0-85130442989&doi=10.1109%2fVLSI-TSA54299.2022.9771042&partnerID=40&md5=3e9c22dae8641010c31bf6c97fb9343bhttps://scholars.lib.ntu.edu.tw/handle/123456789/632070The electron scattering rate and mobility are investigated based on density-functional formalism. The results yield the low field mobility of about 180 cm2/Vs and 100 cm2/Vs for monolayer MoTe2 and WTe2 at room temperature, respectively. Due to the smaller effective mass, WTe2 exhibits the mobility significantly higher than that of MoTe2, suggesting its potential for transistor applications. © 2022 IEEE.Electron scattering; Tellurium compounds; Tungsten compounds; Carrier scattering; Density functional formalism; Effective mass; First principles; Low field mobility; Principle analysis; Scattering rates; Monolayersconference paper10.1109/VLSI-TSA54299.2022.97710422-s2.0-85130442989