劉致為臺灣大學：電子工程學研究所徐正璋Hsu, Cheng-ChangCheng-ChangHsu2007-11-272018-07-102007-11-272018-07-102007http://ntur.lib.ntu.edu.tw//handle/246246/57590“聰明切”是近期發明能建構高品質絕緣層上覆鍺系統的一項先進的技術並且已成功應用在許多元件上，在本論文中，藉由直接晶圓鍵結和氫引起轉換層技術鍺薄膜可成功轉移至另一覆蓋五十奈米熱二氧化矽的矽晶圓上，由於鍺分別擁有在遠紅外線良好的吸收能力及高載子遷移率，因此絕緣層上覆鍺能夠增加金氧半光偵測器的光響應度和操作速度。 本論文中，為了降低成本並用於背面入射應用，我們選擇康寧七零五九玻璃取代矽作為玻璃上覆鍺光偵測器構造的基版，由於光產生電子電洞對可能經由在鍺及二氧化矽介面的缺陷重新結合，因此當蝕刻鍺層的表面可以降低暗電流並且在可見光的照射下增加光響應。除此之外，如果歐姆接觸由鋁金屬換成銦錫氧化物應用於背面入射在玻璃上覆鍺基版上，此結構將可以運用於太陽能電池科技。而且，聰明切科技也應用在鍺伯膜轉換至可撓式聚醯亞鞍膜上，並且與現今的微電子設備及半導體產業製程科技整合。 最後，化學鍵鍺氰鍵在藉由一種簡單可於室溫下進行的冠狀醚氰化物處理而形成，並且它們能夠確實消滅在鍺和二氧化矽層的接面的介面態缺陷。Smart-Cut is a recently established, advanced technology for fabricating high-quality Germaniun-on-insulator (GOI) systems and has successfully applied to many devices. In this thesis, the thin film germanium layer is transferred successfully to another silicon wafer capped with about 50 nm thermal SiO2 by direct wafer bonding and hydrogen-induced layer transfer and formed the germanium-on-insulator (GOI) structure. The germanium-on-insulator can increase the responsivity and the speed of the MOS photodetector due to the large absorption in the infrared and high mobility of Ge, respectively. In this thesis, we choose the corning 7059 glass displacing Si to be the substrate for the fabrication of GOG photodetector in order to decrease the cost and be used for back incident application. The photogenerated electron-hole pairs may recombine via defects at the Ge/SiO2 interface and consequently etching the surface of germanium layer could decrease the dark current and increase the responsivity under the visible light exposure. In addition, the ohmic contact is exchanged from aluminum to indium-tin-oxide (ITO) to apply on the GOG substrate for back incident application. This germanium-on-ITO glass structure could be used for solar cell technology. Moreover, The smart-cut technology is also applied to germanium thin film transfer to flexible polyimide and integrating with existing microelectronic equipments and process technology of semiconductor factories Finally, the chemical bonds ‘‘Ge–CN bonds’’ are formed by a simple room temperature chemical method ‘‘crown-ether cyanide treatment’’ and they could authentically eliminate interface states at Ge/SiO2 interfaces.Chapter 1 Introduction 1.1 Background and Motivation 1 1.2 Organization of the thesis 5 References 6 Chapter 2 Ge-on-Insulator Formation by Wafer Bonding and Smart-cut Layer Transfer 2.1 Introduction 7 2.2 Ge-on-Insulator Infrared Detectors 8 2.2.1 Low Temperature Wafer bonding 8 2.2.2 Liquid Phase Deposition 13 2.2.3 Current Reduction by Metal Gate 15 2.2.4 Device Fabrication and Performance 17 2.3 High Speed Ge-on-Insulator Detectors 24 2.3.1 Device Fabrication 25 2.3.2 Results and Discussions 27 2.3.3 Improvement 29 2.4 Forming Gas Anneal 31 2.4.1 Surface Roughness 31 2.5 Summary 35 References 36 Chapter 3 Ge on Glass and Ge on Polyimide MOS Photodetector for Optical Communication 3.1 Introduction 38 3.2 Ge-on-Glass Device Fabrication and Experimental Procedure 39 3.2.1 Low Temperature Wafer Bonding 39 3.2.2 Surface Roughness 42 3.2.3 Surface Etching 47 3.2.4 Device Layer Structure 50 3.3 Ge-on-Glass Photodetectors 52 3.3.1 Device Fabrication 52 3.3.2 Results and Discussions 54 3.4 Ge thin film layer on Indium Tin oxide 63 3.4.1 Background 63 3.4.2 Device Fabrication 64 3.4.3 Deionized water treatment 66 3.5 Ge thin film layer on Polyimide film photodetector 68 3.5.1 Background 68 3.5.2 Device Fabrication and Experimental Procedure 69 3.5.3 Results and Discussions 72 3.6 Summary 79 References 81 Chapter4 Photodetector Performance Enhancement by Potassium Cyanide and Treatment 4.1 Introduction 83 4.2 KCN Compound Treatment Experimental Procedure 84 4.3 Results and Discussions 87 4.4 Summary 92 References 93 Chapter 5 Conclusion 5.1 Contributions 94 5.2 Suggestions for Future Work 953512811 bytesapplication/pdfen-US絕緣層上覆鍺光偵測器康寧玻璃銦錫氧化物聚醯亞鞍膜氰化鉀GOIphotodetectorCorning glassITOpolyimidepotassium cyanidethesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57590/1/ntu-96-R94943132-1.pdf