Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure

Banerjee, W.W.BanerjeeMaikap, S.S.MaikapRahaman, S.Z.S.Z.RahamanPrakash, A.A.PrakashTien, T.-C.T.-C.TienLi, W.-C.W.-C.LiJER-REN YANG2012-10-242018-06-282012-10-242018-06-282012http://ntur.lib.ntu.edu.tw//handle/246246/243650en-US[SDGs]SDG7Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structurejournal article10.1149/2.067202jeshttp://ntur.lib.ntu.edu.tw/bitstream/246246/243650/-1/92.pdf