馮哲川Feng, Zhe Chuan臺灣大學:光電工程學研究所廖盈傑Liao, Ying-ChiehYing-ChiehLiao2010-07-012018-07-052010-07-012018-07-052009U0001-0308200923425900http://ntur.lib.ntu.edu.tw//handle/246246/188465氮化銦是現今的三五族半導體材料中最具吸引力的化合物.由於它的能隙為0.7eV,使的三五族材料在太陽能應用上能囊括從紫外光波段區到紅外光波段區的光.這對於太陽能的效能有很大的改善.我們利用分子束磊晶來成長氮化銦.其中,電漿槍的瓦數對氮化銦的電性(如:載子濃度,遷移速度)有極大的影響.這部份的原因來自於氮離子,我們能從電漿槍的放射光譜發現氮離子會跟隨瓦數而作相對應的變化.而從X-ray光電子譜也能看出氮離子所造成的點缺陷.另外,從光激發螢光實驗,氮化銦的能隙會隨著五三比的不同而有變化.這部份原因來自於銦的群聚現象.我們同時也用X-ray吸收譜,光學吸收譜,拉曼來量測.InN is the most promising material of nitride-based semiconductors. In this thesis, we use the molecular beam epitaxy(MBE) system to grow InN. The InN’s electrical and optical properties is improved by the plasma gun power variation. The possible reason is due to the nitrogen ion which is confirmed by the optical spectrum and X-ray photoelectron spectroscopy (XPS). Besides, the photoluminescence(PL) is different by the V/III ratio which is due to the In cluster. The near edge X-ray absorption fine spectroscopy (NEXAFS), absorption ,and Raman has been used to measure.目 錄試委員會審定書……………………………………………………………………..II謝.……………………………………………………………………………………III文摘要……………………………………………………………………………….IV文摘要………………………………………………………………………………..Vhapter 1 Introduction 9-1 III-nitrides materials 9-2 InN (InN, latest development and a review of the band-gap controversy) 10-3 InN physical properties 13-4 Spontaneous and piezoelectric polarizations 19-5 Moss–Burstein effect[InN, latest development and a review of the band-gap controversy] 20-6 The different InN growth method compare with MBE 24hapter 2 Experiment detail 26-1 Molecular beam epitaxy(MBE) system: 26-2 X-ray diffraction (XRD): 30-3 Hall-effect measurement: 32-3-1The Hall Effect and the Lorentz Force 32-3-2 The van der Pauw Technique 35-4 X-ray photoelectron spectroscopy 38-4-1 The photoelectric effect: 38-5 Optical absorption 41-6 The procedure of InN growth by MBE: 46hapter 3 Result & Discussion: 50-1 Temperature versus InN morphology and crystal quality 50-1-1 SEM and Hall measurement of temperature dependent InN 51-1-2 X-ray Diffraction (XRD) rocking curve of temperature dependent InN 54-2 N2-plasma gun power versus InN morphology and crystal quality 55-2-1 The optical spectra of nitrogen plasma 56-2-2 Hall measurement of plasma power dependent InN 61-3 Bias voltage versus InN crystal quality 62-3-1 The modification of RF-plasma gun 62-3-2 Mean free path of nitrogen in vacuum environment 64-3-3 XRC and Hall of bias voltage dependent InN 66-3-4 The point defects of InN 70-4 Photoluminescence and optical absorption of InN thin film 74-5 X-ray absorption near edge spectroscopy of InN thin film 87考文獻………………………………………………932332895 bytesapplication/pdfen-US氮化銦分子束磊晶X-ray光電子譜X-ray吸收譜光學吸收譜拉曼InNMBEXPSPLRamanNEXAFSthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/188465/1/ntu-98-R96941074-1.pdf