A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation

Dept. of Electr. Eng., National Taiwan Univ.Liu, C.M.C.M.LiuShone, F.C.F.C.ShoneKuo, J.B.J.B.Kuo2007-04-192018-07-062007-04-192018-07-061995-05http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032070application/pdf313897 bytesapplication/pdfen-USA closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulationjournal article10.1109/ISPSD.1995.515057http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032070/1/00515057.pdf