Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N<inf>2</inf>O annealings

Wu, Y.-L.Y.-L.WuKuo, K.-M.K.-M.KuoJENN-GWO HWU2020-06-112020-06-111994https://scholars.lib.ntu.edu.tw/handle/123456789/500712Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N<inf>2</inf>O annealingsconference paper10.1109/EDMS.1994.8639002-s2.0-85063572022https://www.scopus.com/inward/record.uri?eid=2-s2.0-85063572022&doi=10.1109%2fEDMS.1994.863900&partnerID=40&md5=449b1baa325cc914bd7316130a2cf2d4