Gate-bias stress stability of P-type SnO thin-film transistors fabricated by RF-sputtering

Chiu, I.-C.I.-C.ChiuCheng, I.-C.I.-C.ChengI-CHUN CHENG2018-09-102018-09-102014http://www.scopus.com/inward/record.url?eid=2-s2.0-84891529953&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/387137Gate-bias stress stability of P-type SnO thin-film transistors fabricated by RF-sputteringjournal article10.1109/LED.2013.2291896