Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model

S. W. FangJ. B. KuoD. ChenC. S. YehJAMES-B KUO2018-09-102018-09-102011-12http://scholars.lib.ntu.edu.tw/handle/123456789/366364Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Modelconference paper10.1109/isdrs.2011.61353672-s2.0-84863165526