Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device

H. J. HungJ. I. LuJ. B. KuoD. ChenC. S. YehJAMES-B KUO2018-09-102018-09-102009-12http://scholars.lib.ntu.edu.tw/handle/123456789/351954Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS deviceconference paper10.1109/isdrs.2009.53782142-s2.0-77949414328