Liu, C.-T.C.-T.LiuHsueh, C.-C.C.-C.HsuehThiyagu, S.S.ThiyaguLin, T.-C.T.-C.LinCHING-FUH LIN2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84894117179&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/379966We fabricate Silicon nanowire (SiNW) arrays for solar-cell applications on 6-inch wafers employing metal-assisted chemical etching (MacEtch). It can reduce cost and energy consumption. However it is difficult to make uniform SiNW arrays on large size wafer. Here we demonstrate a simple method to achieve a uniform SiNW on 6 inch wafers. Moreover, optical properties and surface morphologies of 6 inch N-type pyramid/SiNW arrays and 6 inch P-type as-cut/SiNW arrays are investigated. Reflectance indicates the extensive light-trapping effect by the SiNW arrays. Thus, the improved MacEtch method is promising for future commercial mass production on large size wafers. © 2013 IEEE.Light Trapping Effect; MacEtch; SiNW[SDGs]SDG7conference paper10.1109/NANO.2013.6720948