林浩雄臺灣大學:電子工程學研究所陳一誠Chen, Chen-IChen-IChen2010-07-142018-07-102010-07-142018-07-102008U0001-2507200812290700http://ntur.lib.ntu.edu.tw//handle/246246/189097在此篇論文中，我們研究以分子束磊晶機所成長的鈹摻雜砷磷銻化銦以及晶格匹配砷化銦的銻磷化銦塊材的光激發螢光頻譜。鈹摻雜砷磷銻化銦的低溫光激發螢光頻譜顯示出峰值在高能量的不對稱性線型。這個線形跟其他大量摻雜N-type之砷化鎵以及磷化銦的光激發螢光頻譜的線型類似。我們把這個現象歸類於從導電帶(conduction band) 的帶尾能態 (band-tail state)躍遷至退化的(degenerate) 共價帶(valence band)放光所主導。這種不對稱的線型是由於帶尾能態，使這個電子躍遷不需要動量守衡。我們做了對於大量鈹摻雜砷磷銻化銦的理論模擬分析，使用了包含伯斯坦-摩斯偏移(Burstein-Moss shift) 以及多體效應(many-body effect)。由於帶尾能態跟導電帶中間的能量差異，其結果高於我們的實驗數據大約~20毫電子伏特。 我們在晶格匹配砷化銦的銻磷化銦塊材的光激發螢光中，解析出兩種放光模式。其中我們將類似高斯曲線的螢光模式歸咎於深階能階所造成。它的特性可以使用組態座標模型(configuration-coordinate model)來解釋。而我們將另依個解析出來再低能量區域的放光模式，歸咎於在帶尾能態的載子複合機制。In this thesis, we have investigated the photoluminescence of Be-doped InAsPSbnd undoped InPSb grown on InAs substrates by gas-source molecular beam epitaxy.he p-type Be-doped InAs0.66P0.24Sb0.10 shows an asymmetric low temperature PLpectral line-shape with its peak in the high energy side. This line-shape which isimilar to those of heavily n-doped GaAs and InP, and is ascribed to the transitionrom tail states below the conduction band to the degenerate valence bands. Theocalized tail states break the momentum conservation, which results in the peculiarsymmetric line-shape. A theoretical calculation considering the Burstein-Moss shiftnd many-body effect in the heavily Be-doped InAs0.66P0.24Sb0.10 was performed. Thealculated energy gaps are higher than the experimental data by ~20 meV, which isttributed to the energy difference between the tail states and the conduction bandinimum.or InPSb lattice-matched on InAs, two emission bands were resolved. The firstne is with Gaussian-like line-shape and is attributed to deep-level defects. Itsehavior can be illustrated by configuration coordination model. The other resolvedmission band, located in low energy side, is ascribed to the carrier recombination inhe tail states.中文摘要……………………………………………………………………………...Ibstract……………………………………………………………………………....IIndex……………………………………………………………………………… ..IIIable Captions...……………………………………………………………………..Vigure Captions...…………………………………………………………………...VIhapter 1 Introduction ………………………………………………………….1hapter 2 Experiment with procedures……………...…………………………6.1 Epitaxial growth…………………………………………………………….6.2 Photoluminescence measurement………………………………………….7.3 Hall effect measurement……………………………………………………8.4 Electron probe X-ray micro-analysis……………………………………..9hapter 3 Photoluminescence study on Be-doped InAs0.66P0.24Sb0.10 …………….12.1 Basic parameters…………………………………………………………..12.2 Doping level study…………………………………………………………13.3 Photoluminescence study on Be-doped InAs0.66P0.24Sb0.10 ………………14.4 Theoretical calculations ………………………………………….……….16.4.1 Fermi energy…………………..…………………………….……...16.4.2 Many body effect…………………………………………………...17.4.3 Result of simulation………………………………………………...20hapter 4 Photoluminescence study on InPSb…………………………………....33hapter 5 Conclusions……………………………………………………………...48eferences …………………………………………………………………………..493294819 bytesapplication/pdfen-US鈹摻雜砷磷銻化銦磷銻化銦光激發螢光BePhotoluminescenceInAsPSbthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189097/1/ntu-97-R95943140-1.pdf