Wang, S.-L.S.-L.WangChen, C.-Y.C.-Y.ChenHsieh, M.-K.M.-K.HsiehLee, W.-C.W.-C.LeeKung, A. H.A. H.KungLUNG-HAN PENG2018-09-102018-09-102009-0100036951http://scholars.lib.ntu.edu.tw/handle/123456789/352342https://www.scopus.com/inward/record.uri?eid=2-s2.0-63049113072&doi=10.1063%2f1.3089238&partnerID=40&md5=37d76491ceb51a544c52eb5686f5386fWe report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of ∼250°C with an activation energy of 1.27±0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In2 O3. We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO. © 2009 American Institute of Physics.[SDGs]SDG7Activation energy; Gallium; Indium; Phase transitions; Pulse code modulation; Bixbyite; Crystalline phase transitions; Crystallization temperatures; Device resistances; Gallium-doped indium oxides; Joule heating effects; Low-resistance state; Nanosecond electric pulse; Orders of magnitudes; Phase changes; Phase-change memories; Phase change memoryjournal article10.1063/1.30892382-s2.0-63049113072