林清富臺灣大學：光電工程學研究所吳憲昌Wu, Cen-ShawnCen-ShawnWu2007-11-252018-07-052007-11-252018-07-052007http://ntur.lib.ntu.edu.tw//handle/246246/50847單電子電晶體與光子晶體分別是下一個世代十分具有潛力的奈米電子與光學元件。此論文主要是研究單電子電晶體的應用與聚合物型態之光子晶體。本論文主要分為兩部份，第一部份專注於單電子電晶體之應用並利用先進製程技術提昇單電子電晶體之工作溫度。在單電子電晶體應用方面，首先我們結合電子束微影術與奈米材料合成方法，成功的製作出單電子記憶體元件。同時我們也提出利用耦合的單電子電晶體可以當作差分電壓放大器並且具備良好之共模拒斥之特性。更進一步，我們利用高能量之電子束微影術與雙角度蒸鍍技術製作出只有20奈米金屬島之鋁單電子電晶體，根據庫倫阻斷電壓可以估計出電荷能大約為8.22mev相當於95K。而論文第二部份則是提出一個新穎且簡單的方法製作聚合物型態之懸浮準三維光子晶體和三維光子晶體。這個獨特的製程技術只利用單一道電子束微影曝光技術並且可以克服目前製作三維光子晶體的瓶頸，對於實現多功能光子積體電路具有相當程度的突破。Single-electron transistor (SET) and photonic crystal (PC) are potential candidates for the next generation of nano-electronic and optical devices. This thesis work is to investigate experimentally the potential applications of single-electron transistor and polymer based photonic crystal. This thesis is divided into two parts. The first part is devoted to the single-electron transistor applications and development of the fabrication technique toward high-temperature operation of SET. Combining advanced electron-beam lithography and nanophased-material synthesis techniques, we have successfully prepared and measured single electron transistors with memory cell. In addition, we have proposed and demonstrated an SET differential amplifier with good common mode noise rejection characteristics. In an attempt towards high-operating temperature SETs, we have made Al-based SETs with an island with nominal 20nm in diameter utilizing high-energy electron-beam lithography and two-angle shadow evaporation. Judging from the maximum Coulomb blockade voltage, a charging energy of 8.22 meV (~95 K) was achieved. In the second part of this thesis, we propose a simple and novel method to fabricate polymer based suspended quasi-3D photonic slab and 3D PCs. The unprecedented fabrication method utilizes only a single-step electron-beam lithography process, and thus overcomes difficulties encountered by the existing 3D PC techniques. This is a significant leap forward to the realization of multifunctional PC integrated circuits.Table of Contents Acknowledgement i Chinese Abstract ii Abstract iii Table of Contents v List of Figures viii List of Tables xv Chapter 1 Introduction 1 Reference 8 Chapter 2 Basic concepts 10 2.1 Concept of single electron devices 10 2.1.1 Single-electron charging energy 11 2.1.2 Coulomb Blockade Effect 13 2.1.3 Single electron transistor 15 2.2 Fundamental of Photonic crystal 22 2.2.1 Maxwell’s Equations in Periodic Media 23 2.2.2 Bloch waves and Brillouin zones 25 2.2.3 The origin of the photonic band gap 27 Reference 33 Chapter 3 Experimental Techniques 35 3.1 The sample layout 35 3.2 Electron beam lithography 36 3.3 Shadow evaporation technique 41 3.4 Cryogenics 45 3.5 Electrical measurement setup 45 3.6 Optical measurement setup 47 Reference 48 Chapter 4 SET and memory cell with Au Colloidal Islands 49 4.1 Introduction 49 4.2 Sample preparation 51 4.3 Electrical measurement results 58 4.4 Memory effect 62 4.5 Conclusion 67 Reference 68 Chapter 5 Coupled single electron transistors as a differential voltage amplifier 70 5.1 Introduction 70 5.2 Sample fabrication 72 5.3 Current-voltage characteristics 74 5.4 Charge state of parallel-coupled SETs 75 5.5 Differential voltage amplifiers 80 5.6 Possible applications of Quantum computing 81 5.7 Conclusion 84 Reference 85 Chapter 6 Fabrication of high operating temperature all-aluminum Single-electron transistors 88 6.1 Introduction 88 6.2 High-energy e-beam lithography technique 90 6.3 Electrical measurement results 95 6.4 Conclusion 101 Reference 102 Chapter 7 Polymer-based photonic crystals fabricated with single-step electron beam lithography 104 7.1 Introduction 104 7.2 Polymer-based photonic crystals 106 7.3 Suspended quasi-3D PC structure 107 7.4 3D PC structure 114 7.5 Conclusion 117 Reference 119 Chapter 8 Conclusions 1214647593 bytesapplication/pdfen-US單電子電晶體庫倫阻斷電荷能單電子記憶單元單電子差分電壓放大器聚合物光子晶體電子束微影術Single-electron transistorCoulomb blockadeCharge energySET memorySET differential voltage amplifierPolymer photonic crystalE-beam lithographythesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/50847/1/ntu-96-D91941015-1.pdf