Chen S.-SJAMES-B KUO2023-06-092023-06-091994214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028424289&doi=10.1143%2fJJAP.33.2494&partnerID=40&md5=c4e2c51efbaa6341991ad275bbb7cbedIn this paper, we present an analytical dc model for a-Si:H thin-film transistors considering deep and tail states simultaneously. Using an effective temperature approach, the localized deep and tail states have been considered in the dc model such that no approximations are needed. As verified by the published data, this analytical dc model provides an accurate prediction of the drain current characteristics of an a-Si:H thin-film transistor. © The Japan Society of Applied Physics.Amorphous films; Electric currents; Electron energy levels; Semiconducting silicon; Semiconductor device models; Thermal effects; Thin film devices; Amorphous silicon thin film transistors; Deep state; Effective temperature; Tail state; Transistorsjournal article10.1143/JJAP.33.24942-s2.0-0028424289