Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

Chen, Y. H.Y. H.ChenCheng, C. Y.C. Y.ChengChen, S. Y.S. Y.ChenRodriguez, J. S. D.J. S. D.RodriguezLiao, H. T.H. T.LiaoWatanabe, K.K.WatanabeTaniguchi, T.T.TaniguchiChen, C. W.C. W.ChenSankar, R.R.SankarChou, F. C.F. C.ChouChiu, H. C.H. C.ChiuCHUN-WEI CHEN2020-04-212020-04-21201923977132https://scholars.lib.ntu.edu.tw/handle/123456789/485020Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistorsjournal article10.1038/s41699-019-0133-3