Lan H.-YLin Y.-YChang C.-HCHAO-HSIN WU2021-09-022021-09-022017https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029537358&partnerID=40&md5=b62a8a6348833e00033c01f4a880e47dhttps://scholars.lib.ntu.edu.tw/handle/123456789/580554In this report, the optical frequency responses of GaN-based LEDs with different p-contact designs are presented. The higher modulation bandwidth is owing to better current spreading with embedded transparency contact layer (TCL). The f-3dB-J curve of the LEDs with TCL exhibits higher injection current density and optical modulation bandwidth. The highest f-3dB up to 406 MHz is achieved.Bandwidth; Frequency response; Gallium nitride; Light; Light modulation; Manufacture; Modulation; Optical communication; Optical signal processing; Semiconductor device manufacture; Semiconductor diodes; Semiconductor junctions; Wide band gap semiconductors; Contact layers; Current spreading; GaN based LED; GaN-based light-emitting diodes; Injection current density; Modulation bandwidth; Optical frequency response; Visible light communications (VLC); Light emitting diodesconference paper2-s2.0-85029537358