Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation

Lin, C.-C.C.-C.LinHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-79959530084&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/363037Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensationjournal article10.1109/TDMR.2011.2108300