Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy

Hwang, Jenn-ShyongJenn-ShyongHwangChou, WYWYChouChang, GSGSChangTyan, SLSLTyanMINGHWEI HONGMannaerts, JPJPMannaertsKwo, JJKwo2018-09-102018-09-101997http://scholars.lib.ntu.edu.tw/handle/123456789/331370Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxyconference paper