Kao, F.-J.F.-J.KaoChen, J.-C.J.-C.ChenSHENG-LUNG HUANG2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-34548646187&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/303166In this paper we have made a comparison of optical beam induced current (OBIC) imaging with DC and radio frequency (RF) contrast on a photodetector. The DC and RF contrasts are generated by a cw argon-krypton ion laser and a mode-locked TUsapphire laser, respectively. We have found that OBIC mapping at RF would allow profiling of the device's spatial distribution of temporal response. Thus the use of a pulsed laser in OBIC would contribute one more dimension in semiconductor device metrology. © 2003 IEEE.Argon lasers; Nanostructures; Photonics; Radio waves; Semiconductor devices; Semiconductor lasers; Krypton ion lasers; Mode-locked; Optical beam induced currents; Radio frequencies; Temporal response; Pulsed lasersconference paper10.1109/CLEOPR.2003.1274554