National Taiwan University Dept Elect EngnShi, Jin-WeiJin-WeiShiGan, Kian-GiapKian-GiapGanChen, Yen-HungYen-HungChenSun, Chi-KuangChi-KuangSunChiu, Yi-JenYi-JenChiuBowers, John E.John E.Bowers2006-11-152018-07-062006-11-152018-07-062002-11http://ntur.lib.ntu.edu.tw//handle/246246/200611150121674Maximum-output-power and bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors (PDs). In this paper, we report record high-peak output voltage ( 30 V) together with ultrahigh-speed performance (1.8 ps, 190 GHz) observed in low-temperature- grown GaAs (LTG-GaAs)-based metal-semiconductor-metal (MSM) traveling-wave photodetectors (TWPDs) at a wavelength of 800 nm. Ultrahigh-peak output power and ultrahigh-electrical bandwidth performances were achieved due to superior MSM microwave guiding structure, short carrier trapping time, and the capability to take high bias voltage ( 30 V) with a LTG-GaAs layer. Under such a high bias voltage, a significant nonlinear photocurrent increase with the bias voltage was observed. The nonlinear photoconductance and ultrahigh-output power-bandwidth performances opens a new way in the application of high-performance optoelectronic mixers and photomixer devices.application/pdf181322 bytesapplication/pdfzh-TWMetal–semiconductor–metal (MSM)nonlinearitiesphotodetectors (PDs)traveling-wave devicesjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121674/1/8013.pdf