Lu, Yu-HsuanYu-HsuanLuLiu, Chin-YuChin-YuLiuFan, Kai-LinKai-LinFanLin, Yu-ShuYu-ShuLinMIIN-JANG CHENCHAO-HSIN WU2026-01-152026-01-152025-12-09https://www.scopus.com/record/display.uri?eid=2-s2.0-105024757562&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/735334In this report, we show the characteristics of a black phosphorus (BP) dual-gate transistor with top-gate dielectric layer made of Al2O3 using exposure mode atomic layer deposition (E-mode ALD). From the electrical and material analysis, we found that this ALD process had an annealing effect on the Germanium (Ge)-BP metal contacts which increased the ON current (Ion) of the back-gate characteristics by 12 times and increased the field-effect hole mobility (μp,FE) by 17.9 times. Raman spectroscopy was employed to assess the passivation capability of the Al2O3 layer in suppressing BP oxidation under ambient conditions. Furthermore, electrical characterization demonstrated that the Al2O3 film grown via this process exhibits high dielectric quality and a low leakage current density of 0.5 pA/μm2.truealuminum oxide (Al2O3)atomic layer deposition (ALD)black phosphorusdual-gate FETgermaniumphosphorus oxidejournal article10.1021/acsaelm.5c016262-s2.0-105024757562