Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopy

Li, H.H.LiCheng, H.-Y.H.-Y.ChengChen, W.-L.W.-L.ChenHuang, Y.-H.Y.-H.HuangLi, C.-K.C.-K.LiChang, C.-Y.C.-Y.ChangWu, Y.-R.Y.-R.WuLu, T.-C.T.-C.LuChang, Y.-M.Y.-M.Chang2020-06-112020-06-1120179784863486096https://www.scopus.com/inward/record.uri?eid=2-s2.0-85045879273&doi=10.23919%2fMOC.2017.8244609&partnerID=40&md5=f3bfdd43d8c631e32088f1ca091ca469https://scholars.lib.ntu.edu.tw/handle/123456789/5016172017-November[SDGs]SDG15Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopyconference paper10.23919/MOC.2017.8244609