Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study

Chu, Rei-LinRei-LinChuHsueh, Wei-JenWei-JenHsuehChiang, Tsung-HungTsung-HungChiangLee, Wei-ChinWei-ChinLeeLin, Hsiao-YuHsiao-YuLinLin, Tsung-DaTsung-DaLinBrown, Gail JGail JBrownChyi, Jen-InnJen-InnChyiHuang, Tsung-ShiewTsung-ShiewHuangPi, Tun-WenTun-WenPiMINGHWEI HONGothers2018-09-102018-09-102013http://scholars.lib.ntu.edu.tw/handle/123456789/379372Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Studyjournal article