李嗣涔臺灣大學：電子工程學研究所陳瑞麟Chen, Jui-LinJui-LinChen2007-11-272018-07-102007-11-272018-07-102005http://ntur.lib.ntu.edu.tw//handle/246246/57261本論文研究利用低壓化學氣相沈積法來成長不摻雜、P型及N型摻雜的矽奈米線(SiNW)並觀察壓力對其成長之影響，我們使用不同直徑的金奈米顆粒當催化劑找出生長不同矽奈米線的成長溫度與壓力範圍。此外，並利用穿透式電子顯微鏡(TEM)來分析矽奈米線的成分、結晶與表面非晶結構之氧化層形成機制。最後，我們成功利用矽奈米線製備場效電晶體，並利用電性量測確定P型矽奈米線的摻雜。The growth of undoped, p-type, and n-type silicon nanowires (SiNWs) has been systematically investigated using the low pressure chemical vapor deposition. The effect of the chamber pressure on the growth is observed. The growth windows of SiNWs with different diameters of Au nanoparticles as catalysts were also found. The growth mechanism of Silicon nanowires and native oxide on the SiNWs are analyzed by transmission electron microscope (TEM). The SiNWs FET was fabricated successfully. Single crystal p-type SiNWs have been prepared and characterized by electrical transport measurements.摘要 A Abstract B Contents I Figure Captions III Lists of Table VII 1. Chapter 1 Introduction 1 2. Chapter 2 Experimental 5 2.1. Deposition System 5 2.2. Preparation 5 2.3. Deposition Procedures 7 2.4. Device fabrication 8 2.5. Measurement Techniques 8 2.5.1. Raman Spectrum 8 2.5.2. Photoluminescence Spectrum 9 2.5.3. Current – Voltage Characteristics 11 2.5.4. Thickness Measurement of Buffered SiO2 11 3. Chapter 3 The Growth of Silicon Nanowire 13 3.1. Vapor-Liquid-Solid (VLS) Mechanism 14 3.1.1. VLS- assisted silicon nanowire growth 14 3.1.2. The role of the metal catalyst 20 3.2. Sample Preparation 22 3.3. Results and Discussion 25 3.3.1. The growth of undoped SiNWs on different substrates 25 3.3.2. The forming of native oxidation on the SiNW 32 3.3.3. The growth of undoped SiNW with various pressure 34 3.3.3.1. The pressure effect on the growth of pure SiNWs 34 3.3.3.2. The growth window of undoped SiNWs with 20, 50, and 10 nm Au nanoparticles as catalysts 45 3.3.4. The growth of p-type SiNW with various pressure 55 3.3.5. The growth of n-type SiNW with various temperature 68 4. Chapter 4 The Fabrication of SiNW Field Effect Transistor 75 4.1. Sample Preparation 78 4.2. Results and Discussion 82 4.2.1. The SiNW FET with Cr /Au metal contact 82 4.2.1.1. The current-voltage (I-V) characteristics of the SiNW at zero gate voltage 82 4.2.1.2. The gate-dependent current versus bias voltage (IDS-VDS) curves 86 4.2.1.3. IDS –VGS characteristics of a SiNW FET 88 4.2.2. The SiNW FET with Ti /Au metal contact 90 4.2.2.1. The current-voltage (I-V) characteristics of the SiNW 90 5. Chapter 5 Conclusions 92 Reference 962908920 bytesapplication/pdfen-US矽奈米線場效電晶體壓力Silicon Nano-wireField Effect Transistorpressurethesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57261/1/ntu-94-R92943046-1.pdf