Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures

CHIH-CHUNG YANGMickevi?ius, J.J.Mickevi?iusDobrovolskas, D.D.Dobrovolskas?imonyte, I.I.?imonyteTamulaitis, G.G.TamulaitisChen, C.-Y.C.-Y.ChenLiao, C.-H.C.-H.LiaoChen, H.-S.H.-S.ChenCHIH-CHUNG YANG2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84882456073&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/378419Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structuresjournal article10.1002/pssa.201228824