Microwave noise of Si/Si <inf>0.6</inf> Ge <inf>0.4</inf> heterojunction bipolar transistors

Mohammadi, S.S.MohammadiLu, L.H.L.H.LuMa, Z.Z.MaKatehi, L.P.B.L.P.B.KatehiBhattacharya, P.K.P.K.BhattacharyaPonchak, G.E.G.E.PonchakCroke, E.T.E.T.CrokeLIANG-HUNG LU2020-06-112020-06-112000https://scholars.lib.ntu.edu.tw/handle/123456789/498251Microwave noise of Si/Si <inf>0.6</inf> Ge <inf>0.4</inf> heterojunction bipolar transistorsconference paper10.1109/SMIC.2000.8442872-s2.0-84962013763https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962013763&doi=10.1109%2fSMIC.2000.844287&partnerID=40&md5=1fc79a8640a7c42276d246f02a7a6f33