Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing

Chang, YCYCChangMerckling, CCMercklingPenaud, JJPenaudLu, CYCYLuBrammertz, GGBrammertzWang, WEWEWangMINGHWEI HONGKwo, JJKwoDekoster, JJDekosterCaymax, MMCaymaxothers2018-09-102018-09-102010http://scholars.lib.ntu.edu.tw/handle/123456789/357458Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealingconference paper