STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices

J. B. KuoD. ChenC. S. YehC. T. TsaiM. MaJAMES-B KUO2018-09-102018-09-102008-10http://scholars.lib.ntu.edu.tw/handle/123456789/342563STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devicesconference paper