Modeling the Fringing Electric Field Effect on the Threshold Voltage of FD SOI NMOS Devices with the LDD/Sidewall Oxide Spacer Structure

S. C. LinJ. B. KuoJAMES-B KUO2018-09-102018-09-102003-12http://scholars.lib.ntu.edu.tw/handle/123456789/304102Modeling the Fringing Electric Field Effect on the Threshold Voltage of FD SOI NMOS Devices with the LDD/Sidewall Oxide Spacer Structurejournal article10.1109/TED.2003.8169102-s2.0-0347338039WOS:000188004300031