Modulate threshold voltage to achieve enhancement mode fin-structured InGaAs high electron mobility transistors (Fin-HEMTs) through narrowing fin structure's width

Yang, S.-C.S.-C.YangDai, C.-J.C.-J.DaiChang, L.-C.L.-C.ChangCHAO-HSIN WU2020-06-292020-06-292017https://scholars.lib.ntu.edu.tw/handle/123456789/505929[SDGs]SDG7Modulate threshold voltage to achieve enhancement mode fin-structured InGaAs high electron mobility transistors (Fin-HEMTs) through narrowing fin structure's widthconference paper10.1109/EDSSC.2017.81264872-s2.0-85043529148https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043529148&doi=10.1109%2fEDSSC.2017.8126487&partnerID=40&md5=8dbecd5ba46966956e742b4b7e1046a0