Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off <0.2V, and hysteresis-free strategies

Lee, M.H.M.H.LeeChen, P.-G.P.-G.ChenLiu, C.C.LiuChu, K.-Y.K.-Y.ChuCheng, C.-C.C.-C.ChengXie, M.-J.M.-J.XieLiu, S.-N.S.-N.LiuLee, J.-W.J.-W.LeeHuang, S.-J.S.-J.HuangLiao, M.-H.M.-H.LiaoTang, M.M.TangLi, K.-S.K.-S.LiChen, M.-C.M.-C.Chen2019-03-112019-03-112015https://scholars.lib.ntu.edu.tw/handle/123456789/404507Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off <0.2V, and hysteresis-free strategiesconference proceeding10.1109/IEDM.2015.74097592-s2.0-84963997605