Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

Dept. of Electr. Eng., National Taiwan Univ.H.-M. WuJ.-Y. LinL.-H. PengC.-M. LeeJ.-I. ChyiE. ChenLUNG-HAN PENG2018-09-102018-09-102003-12http://scholars.lib.ntu.edu.tw/handle/123456789/304330application/pdf141253 bytesapplication/pdfAnnealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidationconference paper10.1109/ISDRS.2003.12721562-s2.0-84945278485