Liu C.-MJAMES-B KUO2023-06-092023-06-091995214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029256024&doi=10.1143%2fJJAP.34.869&partnerID=40&md5=feaab62cc996b589a861a4db93d0b4dbhttps://scholars.lib.ntu.edu.tw/handle/123456789/632466This paper reports the turn-off transient of a double diffused metal-oxide-semiconductor (DMOS) device considering the quasi-saturation behavior. Based on the two-dimensional (2D) simulation result, during the input ramp-down period of 100 ps, the accumulated electrons below the gate oxide are pushed toward the p region belowthe lateral channel toward the source, causing a surge in source current. After the input ramp-down period, theseelectrons are withdrawn from the drain by the quasi-saturation current. © 1995 The Japan Society of Applied Physics.DMOS; Quasi-saturation; Turn-off transientComputer simulation; Electric currents; Electric resistance; Electrons; Semiconductor device structures; Semiconductor doping; Substrates; Diffused metal oxide semiconductor device; Electron density; Quasi saturation; Turn off transient; Two dimensional transient analysis; MOS devicesjournal article10.1143/JJAP.34.8692-s2.0-0029256024