Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Chang, S.-T.S.-T.ChangLiao, M.-H.M.-H.LiaoLee, C.-C.C.-C.LeeHuang, J.J.HuangWang, W.-C.W.-C.WangMING-HAN LIAO2020-01-132020-01-132009https://scholars.lib.ntu.edu.tw/handle/123456789/447979Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineeringconference paper10.1116/1.31252752-s2.0-79953894474https://www.scopus.com/inward/record.uri?eid=2-s2.0-79953894474&doi=10.1116%2f1.3125275&partnerID=40&md5=a3cb7e19505671225ca2bf858a73cf32