A fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 μm BiCMOS technology

SHEY-SHI LU2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-34548854510&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332336A fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 μm BiCMOS technologyconference paper